├── FOSS_EKV26_Verilog-A.pdf
├── README.md
├── LICENSE
├── docs
    └── readme.md
└── ekv26_SDext_Verilog-A.va


/FOSS_EKV26_Verilog-A.pdf:
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https://raw.githubusercontent.com/ekv26/model/HEAD/FOSS_EKV26_Verilog-A.pdf


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/README.md:
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 1 | # model
 2 | FOSS EKV2.6 Compact Model 
 3 | 
 4 | The EKV2.6 MOSFET compact model has had a considerable impact on the academic and industrial community of analog integrated circuit design, since its inception in 1996. The model is available as a free open-source software (FOSS) tool coded in Verilog-A. The present depository provides a short review of foundations of the model and shows its capabilities via characterization and modeling based on a test chip in 180 nm CMOS fabricated via Europractice.
 5 | 
 6 | [EKV26 Model Documentation](https://github.com/ekv26/model/tree/master/docs)
 7 | 
 8 | Licensed under the Educational Community License, Version 2.0 (the "License"); you may not use this file except in compliance with the License. You may obtain a copy of the License at
 9 | 
10 | http://opensource.org/licenses/ECL-2.0
11 | 


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/LICENSE:
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 1 | /*
 2 | EKV MOS model version 2.6 rev.15 with documentation at: http://ekv.epfl.ch 
 3 | Matthias Bucher, Christophe Lallement, Christian Enz, Fabien Theodoloz, Francois Krummenacher
 4 | Electronics Laboratories, Swiss Federal Institute of Technology Lausanne, Switzerland
 5 | This Verilog-A was developed by Wladek Grabinski with modifications
 6 | by Tiburon Design Automation (www.tiburon-da.com).
 7 | This software has been provided pursuant to a License Agreement containing restrictions on its use.
 8 | It may not be copied or distributed in any form or medium, disclosed to third parties,
 9 | reverse engineered or used in any manner not provided for in said License Agreement 
10 | except with the prior written authorization.
11 | Licensed under the Educational Community License, Version 2.0 (the "License"); 
12 | you may not use this file except in compliance with the License.
13 | 
14 | You may obtain a copy of the License at http://opensource.org/licenses/ECL-2.0
15 | 
16 | Unless required by applicable law or agreed to in writing, software distributed under 
17 | the License is distributed on an "AS IS" BASIS, WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, 
18 | either express or implied. See the License for the specific language governing permissions
19 | and limitations under the License.
20 | 
21 | $RCSfile: ekv.va,v $ $Revision: 1.9 $    $Date: 2003/12/17 01:20:10 $
22 | $RCSfile: ekv.va,v $ $Revision: 2.6.15 $ $Date: 2020/05/29 11:50:10 $
23 | */
24 | 


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/docs/readme.md:
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  1 | Model
  2 | =====
  3 | 
  4 | ### Documentation
  5 | 
  6 | <span id="doc"></span> **EKV 2.6 Documentation**
  7 | 
  8 | -   "The EPFL-EKV MOSFET Model Equations for Simulation";   can be
  9 |     downloaded as   [PDF
 10 |     file](https://www.epfl.ch/labs/iclab/wp-content/uploads/2019/02/ekv_v262.pdf)
 11 |       (133kB). 
 12 | 
 13 | **EKV 3.0 Documentation**
 14 | 
 15 | -   A. Bazigos, M. Bucher, F. Krummenacher, J.-M. Sallese, A.-S. Roy, C.
 16 |     Enz,  *EKV3 MOSFET Compact Model Documentation, Model Version
 17 |     301.02* , Technical Report, Technical University of Crete, 16
 18 |     July 2008.
 19 | -   S. Yoshitomi, A. Bazigos, M. Bucher, "EKV3 Parameter Extraction and
 20 |     Characterization of 90nm RF-CMOS Technology" 14th Int.Conf. on Mixed
 21 |     Design, (MIXDES 2007), Ciechocinek, 21-23 June 2007
 22 | -   S. Yoshitomi, "Challenges of Compact Modeling for Deep-Submicron
 23 |     RF-CMOS Devices" 12th Int.Conf. on Mixed Design (MIXDES 2005),
 24 |     Krakow, Poland, 22-25 June 2005
 25 | -   *<span style="font-style: normal;"> A. Bazigos, M. Bucher,</span>  
 26 |     [EKV3.0 Model Code, Parameters & Case
 27 |     Studies](https://www.epfl.ch/labs/iclab/wp-content/uploads/2019/02/EKV3UMW2004_Bazigos_EKV3_code_parameter_extraction_2004.pdf)*
 28 |     ,  
 29 |     Presentation at EKV Model Users’ Group Meeting and Workshop,
 30 |     November 4-5 2004, EPFL, Lausanne.
 31 | 
 32 | **HV-EKV Presentation**
 33 | 
 34 | -   ["The HV-EKV MOSFET
 35 |     Model"](http://www.eigroup.org/cmc/minutes/2q06_presentations/hv-ekv_cmc_may2006.pdf)
 36 |       CMC Meeting, Boston 8th May 2006
 37 | -   W.Grabinski, T.Gneiting "Power/HVMOS Devices Compact Modeling";
 38 |     ISBN: 978-90-481-3045-0 (2010)
 39 | 
 40 | ### Availability
 41 | 
 42 | **<span id="lib"></span> Availability:**
 43 | 
 44 | -   EKV in design libraries:
 45 | 
 46 | <table>
 47 | <tbody>
 48 | <tr class="odd">
 49 | <td>Vendor</td>
 50 | <td>Process</td>
 51 | <td>Docs</td>
 52 | </tr>
 53 | <tr class="even">
 54 | <td>Atmel</td>
 55 | <td>Complex Mixed-signal 1.0 um BiCMOS Technology</td>
 56 | <td><a href="http://www.atmel.com/dyn/resources/prod_documents/doc4025.pdf">BiCMOS2</a></td>
 57 | </tr>
 58 | <tr class="odd">
 59 | <td>Atmel</td>
 60 | <td>Digital &amp; Mixed-signal 0.5 um CMOS</td>
 61 | <td><a href="http://www.atmel.com/dyn/resources/prod_documents/doc4017.pdf">SCMOS3EE</a></td>
 62 | </tr>
 63 | <tr class="even">
 64 | <td>Atmel</td>
 65 | <td>Digital &amp; Mixed-signal 0.5 um CMOS EPROM/OTP</td>
 66 | <td><a href="http://www.atmel.com/dyn/resources/prod_documents/doc4024.pdf">SCMOS3E</a></td>
 67 | </tr>
 68 | <tr class="odd">
 69 | <td>Atmel</td>
 70 | <td>High Speed SiGe BiCMOS RF</td>
 71 | <td><a href="http://www.atmel.com/dyn/resources/prod_documents/doc4633.pdf"><span style="text-decoration: underline;"> UHF6S</span></a></td>
 72 | </tr>
 73 | <tr class="even">
 74 | <td>Atmel</td>
 75 | <td>Smart Power Bulk process</td>
 76 | <td>BCDMOS-III</td>
 77 | </tr>
 78 | <tr class="odd">
 79 | <td>Atmel</td>
 80 | <td>Smart Power SOI process</td>
 81 | <td><a href="http://www.atmel.com/products/BCDSOI/">SMARTIS1</a></td>
 82 | </tr>
 83 | <tr class="even">
 84 | <td>Atmel</td>
 85 | <td>HVCMOS, embedded memory</td>
 86 | <td>at35.7k</td>
 87 | </tr>
 88 | <tr class="odd">
 89 | <td>EM Marin</td>
 90 | <td>Low Power 0.5 um CMOS</td>
 91 | <td></td>
 92 | </tr>
 93 | <tr class="even">
 94 | <td>EM Marin</td>
 95 | <td>Low Power 0.35 um CMOS</td>
 96 | <td></td>
 97 | </tr>
 98 | <tr class="odd">
 99 | <td>EM Marin</td>
100 | <td>Low Power 0.18 um CMOS</td>
101 | <td></td>
102 | </tr>
103 | <tr class="even">
104 | <td>MHS-Electronics</td>
105 | <td>Complex Mixed-signal 1.0 um BiCMOS Technology</td>
106 | <td><a href="http://www.mhs-electronics.com/eng/2/2.2/2.2.1.1.html">BICMOS2SC</a></td>
107 | </tr>
108 | <tr class="odd">
109 | <td>MHS-Electronics</td>
110 | <td>Digital &amp; Mixed-signal 0.5 um CMOS</td>
111 | <td><a href="http://www.mhs-electronics.com/eng/2/2.2/2.2.1.2.html">SCMOS3EE</a></td>
112 | </tr>
113 | <tr class="even">
114 | <td>MHS-Electronics</td>
115 | <td>Digital &amp; Mixed-signal 0.5 um CMOS (high temperature)</td>
116 | <td><a href="http://www.mhs-electronics.com/eng/2/2.2/2.2.1.3.html">SCMOS3E</a></td>
117 | </tr>
118 | <tr class="odd">
119 | <td>MHS-Electronics</td>
120 | <td>Digital &amp; Mixed-signal 0.5 um CMOS (high radiation tolerance)</td>
121 | <td><a href="http://www.mhs-electronics.com/eng/2/2.2/2.2.1.4.html">SCMOS3RT</a></td>
122 | </tr>
123 | <tr class="even">
124 | <td>Telefunken Semi</td>
125 | <td><span style="width: 500px;"> High Speed BiCMOS RF </span></td>
126 | <td><span style="width: 500px;"> <a href="http://www.telefunkensemi.com/foundry-business/uhf6s.html?0=">UHF6S</a> <span>  </span> (TS)</span></td>
127 | </tr>
128 | <tr class="odd">
129 | <td><span style="width: 500px;"> <span class="hl" style=""> Telefunken</span> <span>  </span> Semi</span></td>
130 | <td><span style="width: 500px;"> 0.8um Smart Power SOI SMARTIS1 (TS)</span></td>
131 | <td><span style="width: 500px;"> SMARTIS1 (TS)</span></td>
132 | </tr>
133 | <tr class="even">
134 | <td>Telefunken Semi</td>
135 | <td><span style="width: 500px;"> 0.35um Smart Power SOI </span></td>
136 | <td><span style="width: 500px;"> AT76k (TS)</span></td>
137 | </tr>
138 | <tr class="odd">
139 | <td>Telefunken Semi</td>
140 | <td><span style="width: 500px;"> 0.8um, 700V Smart Power bulk </span></td>
141 | <td><span style="width: 500px;"> TS700V</span></td>
142 | </tr>
143 | <tr class="even">
144 | <td>Toshiba</td>
145 | <td>CMOS2 0.18um Logic Base eDRAM</td>
146 | <td><a href="http://www.mos-ak.org/edinburgh/papers/01_Yoshitomi_MOS-AK_08.pdf">internal use</a></td>
147 | </tr>
148 | <tr class="odd">
149 | <td>Toshiba</td>
150 | <td>CMOS3 0.13um Cu Interconnect</td>
151 | <td><a href="http://www.mos-ak.org/edinburgh/papers/01_Yoshitomi_MOS-AK_08.pdf">internal use</a></td>
152 | </tr>
153 | <tr class="even">
154 | <td>Toshiba</td>
155 | <td>CMOS4 90nm Low-k</td>
156 | <td><a href="http://www.mos-ak.org/edinburgh/papers/01_Yoshitomi_MOS-AK_08.pdf">internal use</a></td>
157 | </tr>
158 | <tr class="odd">
159 | <td>Toshiba</td>
160 | <td>CMOS5 65nm Stress control Low-k II</td>
161 | <td><a href="http://www.mos-ak.org/edinburgh/papers/01_Yoshitomi_MOS-AK_08.pdf">internal use</a></td>
162 | </tr>
163 | </tbody>
164 | </table>
165 | 
166 | -   <span id="availability"></span> <span id="Simulators"></span> EKV in
167 |     simulators:
168 | 
169 | <table>
170 | <tbody>
171 | <tr class="odd">
172 | <td><strong><span style="color: rgb(204, 204, 204);">  Simulator</span></strong></td>
173 | <td><strong><span style="color: rgb(204, 204, 204);">  Version*</span></strong></td>
174 | <td><strong><span style="color: rgb(204, 204, 204);">  EKV2.6 LEVEL</span></strong></td>
175 | <td><strong><span style="color: rgb(204, 204, 204);"> EKV3.0<span>  </span> </span></strong> <strong><span style="color: rgb(204, 204, 204);"> LEVEL</span></strong></td>
176 | <td><strong><span style="color: rgb(204, 204, 204);">  Comments</span></strong></td>
177 | </tr>
178 | <tr class="even">
179 | <td><a href="http://www.agilent.com/">ADS</a></td>
180 | <td>2003C</td>
181 | <td>Verilog-A</td>
182 | <td>Verilog-A</td>
183 | <td><a href="http://legwww.epfl.ch/ekv/ads/">example</a> <span>  </span> [ <a href="https://mail.google.com/a/grabinski.ch/mail/?view=cm&amp;fs=1&amp;tf=1&amp;to=wladek@grabinski.ch">wg</a> ]</td>
184 | </tr>
185 | <tr class="odd">
186 | <td><a href="http://www.altium.com/Evaluate/DEMOcenter/AltiumDesigner60/">Altium</a></td>
187 | <td>6.5</td>
188 | <td>8</td>
189 | <td> </td>
190 | <td>Released Aug.30 2006</td>
191 | </tr>
192 | <tr class="even">
193 | <td><a href="http://www.aimspice.com/">AMI-Spice</a></td>
194 | <td>3.7a</td>
195 | <td>23</td>
196 | <td> </td>
197 | <td>released</td>
198 | </tr>
199 | <tr class="odd">
200 | <td><a href="http://www.aplac.hut.fi/aplac/">APLAC</a></td>
201 | <td>7.30h</td>
202 | <td>EKVMOS</td>
203 | <td> </td>
204 | <td>to be announced</td>
205 | </tr>
206 | <tr class="even">
207 | <td><a href="http://www.avocad.com/">AVOSpice</a></td>
208 | <td>1.82.0805</td>
209 | <td>Verilog-A</td>
210 | <td>Verilog-A</td>
211 | <td> </td>
212 | </tr>
213 | <tr class="odd">
214 | <td><a href="http://www.mentor.com/">ELDO</a></td>
215 | <td>4.6</td>
216 | <td>44 (UPDATE=2.6)</td>
217 | <td>61 Verilog-A</td>
218 | <td>in beta</td>
219 | </tr>
220 | <tr class="even">
221 | <td><a href="http://www.agilent.com/">Golden Gate</a></td>
222 | <td>4.0</td>
223 | <td>ekv</td>
224 | <td>ekv3</td>
225 | <td> </td>
226 | </tr>
227 | <tr class="odd">
228 | <td><a href="https://www.synopsys.com/Tools/Verification/AMSVerification/CircuitSimulation/HSIM/Pages/default.aspx">HSIM</a></td>
229 | <td>2.0</td>
230 | <td>55</td>
231 | <td>Verilog-A</td>
232 | <td> </td>
233 | </tr>
234 | <tr class="even">
235 | <td><a href="http://www.intusoft.com/">IntuSoft</a></td>
236 | <td>ICAP/4</td>
237 | <td> </td>
238 | <td> </td>
239 | <td>shipping</td>
240 | </tr>
241 | <tr class="odd">
242 | <td><a href="http://ltspice.linear-tech.com/software/swcadiii.exe">LTspice/SwitcherCAD III</a></td>
243 | <td>1.09p</td>
244 | <td>12</td>
245 | <td> </td>
246 | <td>free download</td>
247 | </tr>
248 | <tr class="even">
249 | <td><a href="http://www.macspice.com/">MacSpice</a></td>
250 | <td>3f5p10</td>
251 | <td>44</td>
252 | <td> </td>
253 | <td>free download</td>
254 | </tr>
255 | <tr class="odd">
256 | <td><a href="http://www.macinit.com/">MI-SUGAR</a></td>
257 | <td>0.4.4</td>
258 | <td>44</td>
259 | <td> </td>
260 | <td>Mac OSX</td>
261 | </tr>
262 | <tr class="even">
263 | <td><a href="http://www.spectrum-soft.com/">Micro-Cap</a></td>
264 | <td>8.0.0</td>
265 | <td>44</td>
266 | <td> </td>
267 | <td>available now</td>
268 | </tr>
269 | <tr class="odd">
270 | <td><a href="http://www.iue.tuwien.ac.at/doku/minimos_docu/">MINIMOS-NT</a></td>
271 | <td>2.0</td>
272 | <td>Devices.{N;P}MosEkv</td>
273 | <td> </td>
274 | <td>with selfheating</td>
275 | </tr>
276 | <tr class="even">
277 | <td><a href="http://www.anawork.com/">NanoSpice</a></td>
278 | <td>1.1</td>
279 | <td>55</td>
280 | <td> </td>
281 | <td> </td>
282 | </tr>
283 | <tr class="odd">
284 | <td><a href="http://www.ansoft.com/">Nexxim</a></td>
285 | <td>1.0</td>
286 | <td>55</td>
287 | <td>Verilog-A</td>
288 | <td> </td>
289 | </tr>
290 | <tr class="even">
291 | <td><a href="http://ieee.ing.uniroma1.it/ngspice/index.html">NG-Spice</a></td>
292 | <td>rev.17</td>
293 | <td>Verilog-A</td>
294 | <td>Verilog-A</td>
295 | <td>free download</td>
296 | </tr>
297 | <tr class="odd">
298 | <td><a href="http://www.orcad.com/">PSPICE</a> <span>  </span> <a href="https://www.epfl.ch/labs/iclab/ekv/model/#logmatic">[*]</a></td>
299 | <td>9.0</td>
300 | <td>5</td>
301 | <td>thru XML-ADMS</td>
302 | <td> </td>
303 | </tr>
304 | <tr class="even">
305 | <td><a href="http://qucs.sourceforge.net/">Qucs</a></td>
306 | <td>0.0.14</td>
307 | <td>Verilog-A</td>
308 | <td>Verilog-A</td>
309 | <td> </td>
310 | </tr>
311 | <tr class="odd">
312 | <td><a href="http://www.analogy.com/">SABER</a></td>
313 | <td>4.3.2</td>
314 | <td> </td>
315 | <td> </td>
316 | <td> </td>
317 | </tr>
318 | <tr class="even">
319 | <td><a href="http://www.newburytech.co.uk/">SIMetrix</a></td>
320 | <td>4.1</td>
321 | <td>44</td>
322 | <td> </td>
323 | <td>released Feb 2002</td>
324 | </tr>
325 | <tr class="odd">
326 | <td><a href="http://www.silvaco.com/">SmartSpice</a></td>
327 | <td>1.5.5.R</td>
328 | <td>55</td>
329 | <td> </td>
330 | <td> </td>
331 | </tr>
332 | <tr class="even">
333 | <td><a href="http://www.dolphin.fr/">SMASH</a></td>
334 | <td>4.1</td>
335 | <td>5</td>
336 | <td>ekv3 and Verilog-A</td>
337 | <td>released 5.13</td>
338 | </tr>
339 | <tr class="odd">
340 | <td><a href="http://www.cadence.com/">Spectre</a></td>
341 | <td>4.43</td>
342 | <td>ekv</td>
343 | <td>Verilog-A</td>
344 | <td>tested at LEG</td>
345 | </tr>
346 | <tr class="even">
347 | <td><a href="http://www.cadence.com/">SpectreRF</a></td>
348 | <td>6.0</td>
349 | <td>ekv</td>
350 | <td>Verilog-A</td>
351 | <td> </td>
352 | </tr>
353 | <tr class="odd">
354 | <td><a href="http://fides.fe.uni-lj.si/spice/">Spice-Opus</a></td>
355 | <td>2.04</td>
356 | <td>44</td>
357 | <td></td>
358 | <td><a href="http://fides.fe.uni-lj.si/spice/documentation.html">Documentation</a></td>
359 | </tr>
360 | <tr class="even">
361 | <td><a href="http://legwww.epfl.ch/ekv/ekv26s3/">SPICE3</a></td>
362 | <td>3f5</td>
363 | <td>Verilog-A</td>
364 | <td>Verilog-A</td>
365 | <td><a href="http://legwww.epfl.ch/ekv/ekv26s3/">tested</a> <span>  </span> <a href="https://mail.google.com/a/grabinski.ch/mail/?view=cm&amp;fs=1&amp;tf=1&amp;to=wladek@grabinski.ch">[wg</a> ]</td>
366 | </tr>
367 | <tr class="odd">
368 | <td><a href="http://www.avanticorp.com/">Star-Hspice</a></td>
369 | <td>98.4</td>
370 | <td>55</td>
371 | <td>Verilog-A</td>
372 | <td>also<span>  </span> <a href="http://www.tiburon-da.com/">CML libs</a></td>
373 | </tr>
374 | <tr class="even">
375 | <td><a href="https://www.synopsys.com/">Synopsys</a></td>
376 | <td>98.4</td>
377 | <td>55</td>
378 | <td>Verilog-A</td>
379 | <td>also<span>  </span> <a href="http://www.tiburon-da.com/">CML libs</a></td>
380 | </tr>
381 | <tr class="odd">
382 | <td><a href="http://www.tanner.com/eda/">T-Spice</a></td>
383 | <td>11</td>
384 | <td>44 or 55</td>
385 | <td>Verilog-A</td>
386 | <td>also<span>  </span> <a href="http://www.tiburon-da.com/">CML libs</a></td>
387 | </tr>
388 | <tr class="even">
389 | <td><a href="http://www.penzar.com/">TopSPICE</a></td>
390 | <td>6.9</td>
391 | <td>44 or 55</td>
392 | <td> </td>
393 | <td> </td>
394 | </tr>
395 | <tr class="odd">
396 | <td><a href="http://www.eet.bme.hu/staff/run/hu/id/szekely">TRANZ-TRAN</a></td>
397 | <td>3.5</td>
398 | <td> </td>
399 | <td> </td>
400 | <td> </td>
401 | </tr>
402 | <tr class="even">
403 | <td><a href="http://www.winspice.com/">WinSpice</a></td>
404 | <td>1.03.02</td>
405 | <td>44</td>
406 | <td> </td>
407 | <td>free download</td>
408 | </tr>
409 | </tbody>
410 | </table>
411 | 
412 | <span style="font-style: italic;"> (\*) first implementation</span>  
413 | We are supporting the model coded in VHDL-AMS and  
414 | [Verilog-A](http://legwww.epfl.ch/ekv/verilog-a) .  Using the EKV
415 | Verilog-A code the ekv 2.6/3.0 models have been implemented into number
416 | of the GNU and commercial simulations tools including listed above.  
417 | The code is available on request, just   [contact
418 | us!](http://legwww.epfl.ch/ekv/contact.html)
419 | 
420 | ### Extractors
421 | 
422 | <span id="extractors"></span> EKV in parameter extraction systems:
423 | 
424 | <table>
425 | <tbody>
426 | <tr class="odd">
427 | <td><strong><span style="color: rgb(204, 204, 204);">  System(*) </span></strong></td>
428 | <td><strong><span style="color: rgb(204, 204, 204);"> EKV Version 2.6</span></strong></td>
429 | <td><strong><span style="color: rgb(204, 204, 204);"> EKV Version 3.0</span></strong></td>
430 | <td><strong><span style="color: rgb(204, 204, 204);"> Comments</span></strong></td>
431 | </tr>
432 | <tr class="even">
433 | <td> Accelicon</td>
434 | <td> tba</td>
435 | <td>tba</td>
436 | <td><a href="http://www.accelicon.com/index.shtml">contact info</a></td>
437 | </tr>
438 | <tr class="odd">
439 | <td> Aurora</td>
440 | <td>1999.2</td>
441 | <td></td>
442 | <td><a href="https://www.synopsys.com/products/mixedsignal/aurora_ds.html">contact info</a></td>
443 | </tr>
444 | <tr class="even">
445 | <td> BSIM2EKV</td>
446 | <td>EKV2.6 ( <a href="http://www.dolphin.fr/medal/smash/smash_overview.php">Smash 5.13</a> <span>  </span> compatible)</td>
447 | <td></td>
448 | <td><a href="http://analog.epfl.ch/PAD/PAD_pages/Contact.html">contact info</a></td>
449 | </tr>
450 | <tr class="odd">
451 | <td> IC-CAP</td>
452 | <td><span class="text" style=""> <span class="head" style=""> EKV2.6 Modeling Package</span> </span></td>
453 | <td><a href="http://www.admos.de/ekv3.html"><span class="text" style=""> EKV3.0 Toolkit</span></a>   <a href="http://eesof.tm.agilent.com/support/model_support.html#mosfet">IC-CAP MOSFET Support</a></td>
454 | <td><a href="https://mail.google.com/a/grabinski.ch/mail/?view=cm&amp;fs=1&amp;tf=1&amp;to=info@admos.de">contact info</a></td>
455 | </tr>
456 | <tr class="even">
457 | <td> MOSTXX</td>
458 | <td><a href="http://www.mos-ak.org/grenoble/slides/P04_Tomaszewski_MOS-AK.ppt">EKV2.6 Modeling Example</a></td>
459 | <td></td>
460 | <td><a href="https://mail.google.com/a/grabinski.ch/mail/?view=cm&amp;fs=1&amp;tf=1&amp;to=dtomasz@ite.waw.pl">contact info</a></td>
461 | </tr>
462 | <tr class="odd">
463 | <td> UTMOST</td>
464 | <td><a href="http://www.simucad.com/products/analog/spicemodels/models/ekv/ekv.html">EKV2.6</a></td>
465 | <td></td>
466 | <td><a href="http://www.silvaco.com/applications/archive/jul_98/a2/jul98_a2.html">UTMOS III</a></td>
467 | </tr>
468 | </tbody>
469 | </table>
470 | 
471 | <span style="font-style: italic;"> (\*) first implementation  
472 | </span>
473 | 
474 | -   [EKV 2.6 parameter extraction
475 |     tutorial](https://www.epfl.ch/labs/iclab/wp-content/uploads/2019/02/EKV_ParEx_2001.pdf)
476 |     -   [example parameter set](https://www.epfl.ch/0_5um_cmos_par/)
477 | -   [EKV 3.0 model code & parameter
478 |     extraction](https://www.epfl.ch/labs/iclab/wp-content/uploads/2019/02/EKV3UMW2004_Bazigos_EKV3_code_parameter_extraction_2004.pdf)
479 |     -   [example parameter set](https://www.epfl.ch/page-44590-en-html/)
480 | 
481 | **Links:**  
482 | 
483 | -   Technology partners and web resources:
484 |     -   [Atmel](http://www.atmel.com/)
485 |     -   [Austriamicrosystems](http://www.austriamicrosystems.com/eng/Startpage-Home/Support/Foundry-Design-Support/HIT-Kit)
486 |     -   [CSEM](http://www.csem.ch/)   Neuchatel
487 |     -   [CMC Microsystems](http://www.cmc-canada.ca/)  
488 |     -   [CMP](https://mycmp.fr/)   Circuits Multi-Projets  
489 |     -   [COMON](http://compactmodelling.eu/) <span
490 |         style="font-style: italic;">  </span> (<span
491 |         style="font-style: italic;"> CO</span> mpact   <span
492 |         style="font-style: italic;"> MO</span> delling   <span
493 |         style="font-style: italic;"> N</span> etwork): Marie Curie
494 |         Actions—Industry-Academia Partnerships and Pathways (IAPP)  
495 |     -   [Dolphin Integration](http://www.dolphin.fr/) : download ekv3 in
496 |          
497 |         [smash](http://www.dolphin.fr/medal/smash/smash_overview.php)  
498 |     -   [EKV3 RFIC Group](http://www.ekv3.tuc.gr/)   at  
499 |         [TUC](http://www.tuc.gr/)
500 |     -   [EM Marin](http://www.emmarin.com/)
501 |     -   [Europractice](http://www.imec.be/europractice/europractice.html)
502 |         ,   [Eurotraining](http://www.eurotraining.net/)
503 |     -   <span id="logmatic"></span> [LOGMATIC](http://www.logmatic.ch/)
504 |         , local pspice simulation and design support
505 |     -   [MOSIS](https://www.mosis.com/)
506 |     -   Procedural Analog Design (
507 |         [PAD](http://legwww.epfl.ch/CSL/PAD/PAD_pages/DesignToolHome.html)
508 |         )
509 |     -   [ROBUSPIC](http://www-g.eng.cam.ac.uk/robuspic/links.htm)  
510 |         (ROBUst mixed signal design methodologies for Smart Power ICs)
511 |     -   [Telefunken](http://telefunkensemi.com/)  
512 |     -   [Toshiba](http://www.mos-ak.org/edinburgh/papers/01_Yoshitomi_MOS-AK_08.pdf)
513 | 


--------------------------------------------------------------------------------
/ekv26_SDext_Verilog-A.va:
--------------------------------------------------------------------------------
  1 | /*
  2 | EKV MOS model version 2.6 rev.15 with documentation at: http://ekv.epfl.ch 
  3 | Matthias Bucher, Christophe Lallement, Christian Enz, Fabien Theodoloz, Francois Krummenacher
  4 | Electronics Laboratories, Swiss Federal Institute of Technology Lausanne, Switzerland
  5 | This Verilog-A was developed by Wladek Grabinski with modifications
  6 | by Tiburon Design Automation (www.tiburon-da.com).
  7 | This software has been provided pursuant to a License Agreement containing restrictions on its use.
  8 | It may not be copied or distributed in any form or medium, disclosed to third parties,
  9 | reverse engineered or used in any manner not provided for in said License Agreement 
 10 | except with the prior written authorization.
 11 | Licensed under the Educational Community License, Version 2.0 (the "License"); 
 12 | you may not use this file except in compliance with the License.
 13 | 
 14 | You may obtain a copy of the License at http://opensource.org/licenses/ECL-2.0
 15 | 
 16 | Unless required by applicable law or agreed to in writing, software distributed under 
 17 | the License is distributed on an "AS IS" BASIS, WITHOUT WARRANTIES OR CONDITIONS OF ANY KIND, 
 18 | either express or implied. See the License for the specific language governing permissions
 19 | and limitations under the License.
 20 | 
 21 | $RCSfile: ekv.va,v $ $Revision: 1.9 $    $Date: 2003/12/17 01:20:10 $
 22 | $RCSfile: ekv.va,v $ $Revision: 2.6.15 $ $Date: 2020/05/29 11:50:10 $
 23 | */
 24 | /*
 25 | `include "disciplines.vams"
 26 | `include "constants.vams"
 27 | `include "compact.vams"
 28 | */
 29 | // includes: in case we do not want to include any other file [AB:040902]
 30 | // we can just add the following section in this file
 31 | // AB: i hope this may help our code to be easily transported
 32 | //----------------------------------------
 33 | // from disciplines.h we need:
 34 | // Electrical
 35 | // Current in amperes
 36 | nature Current
 37 | 	units      = "A";
 38 | 	access     = I;
 39 | 	idt_nature = Charge;
 40 | `ifdef CURRENT_ABSTOL
 41 | 	abstol     = `CURRENT_ABSTOL;
 42 | `else
 43 | 	abstol     = 1e-12;
 44 | `endif
 45 | endnature
 46 | // Charge in coulombs
 47 | nature Charge
 48 | 	units      = "coul";
 49 | 	access     = Q;
 50 | 	ddt_nature = Current;
 51 | `ifdef CHARGE_ABSTOL
 52 | 	abstol     = `CHARGE_ABSTOL;
 53 | `else
 54 | 	abstol     = 1e-14;
 55 | `endif
 56 | endnature
 57 | // Potential in volts
 58 | nature Voltage
 59 | 	units      = "V";
 60 | 	access     = V;
 61 | 	idt_nature = Flux;
 62 | `ifdef VOLTAGE_ABSTOL
 63 | 	abstol     = `VOLTAGE_ABSTOL;
 64 | `else
 65 | 	abstol     = 1e-6;
 66 | `endif
 67 | endnature
 68 | // Flux in Webers
 69 | nature Flux
 70 | 	units      = "Wb";
 71 | 	access     = Phi;
 72 | 	ddt_nature = Voltage;
 73 | `ifdef FLUX_ABSTOL
 74 | 	abstol     = `FLUX_ABSTOL;
 75 | `else
 76 | 	abstol     = 1e-9;
 77 | `endif
 78 | endnature
 79 | // Conservative discipline
 80 | discipline electrical
 81 | 	potential    Voltage;
 82 | 	flow         Current;
 83 | enddiscipline
 84 | // Signal flow disciplines
 85 | discipline voltage
 86 | 	potential    Voltage;
 87 | enddiscipline
 88 | discipline current
 89 | 	potential    Current;
 90 | enddiscipline
 91 | //from constants.h we need
 92 | `define C_EPSSIL                1.03594314e-10
 93 | `define C_EPSOX                 34.5e-12
 94 | `define C_QE                    1.602e-19
 95 | `define C_K                     1.3807e-23
 96 | `define	P_K	1.3806226e-23 
 97 | `define	P_EPS0	8.85418792394420013968e-12 
 98 | `define	P_CELSIUS0	273.15 
 99 | `define POS_MIN         1.0E-6
100 | `define SQRT2           1.4142135623730950488016887242097
101 | `define ONE3RD          0.33333333333333333333333333333333
102 | `define ONESQRT2        0.70710678118654752440084436210485
103 | //if any other constant is needed it may be copied from the constants.h and be put above.
104 | //------------------------------------------ end of includes
105 | `define FWD 1
106 | `define REV -1
107 | // AB 040902
108 | `define NOT_GIVEN -1.0e21
109 | `define DEFAULT_TNOM 25
110 | module ekv_va(d,g,s,b);
111 |     // %%DEVICE_CLASS=MOS(NMOS:TYPE=1,PMOS:TYPE=-1)%%
112 |     //  Node definitions
113 |     inout           d,g,s,b;         // external nodes
114 |     electrical      d,g,s,b;         // external nodes
115 |     //      Branch definitions
116 |     branch (d,s)    ds;
117 |     branch (d,b)    db;
118 |     branch (s,b)    sb;
119 |     branch (g,b)    gb;
120 |     // * Local variables
121 |     real tmp1, tmp2, tmp3; // temporary variables
122 |     real VGprime, GAMMAprime;// short and narrow channel effect
123 |     real VP, VPprime;    // pinch-off voltage
124 |     real if_, ir, irprime;   // normalized currents
125 |     real VDSS, VDSSprime;// saturation voltage
126 |     real deltaL, Leq;    // channel length reduction
127 |     real beta;           // transconductance factor
128 |     real n;              // slope factor
129 |     real Ispec;          // specific current
130 |     real Vt;             // k*T/q
131 |     real gm, gms, gmbs, gds;
132 |     real isub, Isub;
133 |     real inv_Vt, Vt_01, Vt_2, Vt_4, Vt_Vt, Vt_Vt_2, Vt_Vt_16;
134 |     real eps_COX, eps_COX_W, eps_COX_L;
135 |     real Lc, Lc_LAMBDA, IBN_2, T0, T1, eta_qi;
136 |     real inv_UCRIT, Lc_UCRIT, Lc_IBB, IBA_IBB;
137 |     integer Mode;
138 |     real WETA_W, LETA_L;
139 |     real E0_Q_1, AWL;
140 |     real T, KP_Weff;
141 |     real Eg, refEg, deltaT, ratioT, Tnom;
142 |     real VTO_T, VTO_S, KP_T, UCRIT_T, IBB_T, PHI_T, GAMMA_S;
143 |     real sqrt_Lprime_Lmin;
144 |     real GAMMAstar, sqrt_GAMMAstar;
145 |     real big_sqrt_VP;
146 |     real big_sqrt_VP0, VP0;
147 |     real PHI_VD, PHI_VS;
148 |     real sqrt_PHI;
149 |     real sqrt_PHI_VP, sqrt_PHI_VD, sqrt_PHI_VS;
150 |     real sqrt_PHI_VD_Vt, sqrt_PHI_VS_Vt;
151 |     real Vds, deltaV_2, Vip;
152 |     real VDSS_sqrt, sqrt_VDSS_deltaV, sqrt_Vds_VDSS_deltaV;
153 |     real VDSSprime_sqrt, sqrt_VDSSprime_deltaV, sqrt_Vds_VDSSprime_deltaV;
154 |     real if_ir;
155 |     real sqrt_if, sqrt_ir, sqrt_irprime;
156 |     real dif_dv, dir_dv, dirprime_dv;
157 |     //  Charge related variables
158 |     real sif, sir, sif2, sir2, sif3, sir3;
159 |     real sif_sir_2;
160 |     real qi, qb;
161 |     real QD, QS, QI, QB, QG;
162 |     real VP_PHI_eps, sqrt_PHI_VP_2, WLCox;
163 |     real n_Vt_COX, n_1, n_1_n;
164 |     //  Variables used for derivatives computation
165 |     real dVP_dVD, dVP_dVG, dVP_dVS;
166 |     real dif_dVD, dif_dVS, dif_dVG;
167 |     real dir_dVD, dir_dVS, dir_dVG;
168 |     real dVDSS_dVD, dVDSS_dVG, dVDSS_dVS;
169 |     real ddeltaV_dVD, ddeltaV_dVG, ddeltaV_dVS;
170 |     real dVip_dVD, dVip_dVG, dVip_dVS;
171 |     real dVDSSprime_dVD, dVDSSprime_dVG, dVDSSprime_dVS;
172 |     real dirprime_dVD, dirprime_dVG, dirprime_dVS;
173 |     real dLeq_dVD, dLeq_dVG, dLeq_dVS;
174 |     real dbeta_dVD, dbeta_dVG, dbeta_dVS;
175 |     real VGstar, sqrt_VGstar;
176 |     real VG, VD, VS;
177 |     real Von, Vdsat, Id, Ibd;
178 |     real Gn;
179 |     real GAMMA_sqrt_PHI, Lmin, Lprime, T0_GAMMA_1, THETA_VP_1, Vc;
180 |     real Vdsprime, Vt_Vc, dGAMMAprime_dVD, dGAMMAprime_dVG, dGAMMAprime_dVS;
181 |     real dVPprime_dVD, dVPprime_dVG, dVPprime_dVS, ddeltaL_dVD, ddeltaL_dVG;
182 |     real ddeltaL_dVS, dn_dVD, dn_dVG, dn_dVS;
183 |     real log_Vc_Vt, sqrt_PHI_VP0, sqrt_VP_Vt;
184 |     real Lc_IBB_Vib, Vib, dIsub_factor, exp_ib;
185 |     real inv_Vib, sqrt_PHI_VP2_2;
186 |     real V0, deltaVFB, vL;
187 |     real dQI_dVD, dQI_dVS, dQI_dVG;
188 |     real dQB_dVD, dQB_dVS, dQB_dVG;
189 |     real Leff, Weff;
190 |     real RSeff, RDeff;
191 |     real yk, z0, zk;
192 |     real EPSOX, epssil;
193 |     real ddt_QD, ddt_QS;
194 |     //DIODES realted variables [AB: 040902]
195 |     real as_i, ad_i, ps_i, pd_i, v_di_b, v_si_b;
196 |     real temp_arg, tmp0;
197 |     real js_t, jsw_t, jswg_t;
198 |     real pb_t, pbsw_t, pbswg_t;
199 |     real cj_t, cjsw_t, cjswg_t;
200 |     real njts_t, njtssw_t, njtsswg_t;
201 |     real is_d, arg_d, is_s, arg_s;
202 |     real f_breakdown_d, f_breakdown_s, idb_tun, isb_tun;
203 |     real csb_d, cssw_d, csswg_d;
204 |     real csb_s, cssw_s, csswg_s;
205 |     real qjd, qjs;
206 |     
207 |     // parameter definitions
208 |     parameter integer TYPE = 1 from [-1:1] exclude 0; // NMOS=1, PMOS=-1
209 |     parameter integer Noise = 1 from [0:1];     // Set to zero to prevent noise calculation
210 |     parameter real Trise = 0.0 from [-inf:inf]; // Difference sim. temp and device temp [C deg]
211 | //  parameter real Temp = -`NOT_GIVEN from [`P_CELSIUS0:inf];  // Device temp [C]
212 | //AB:  the parameter name Temp is not working for no obvious reason; changed to TEMP
213 |     parameter real TEMP = -`NOT_GIVEN from [`P_CELSIUS0:inf];  // Device temp [C]
214 |     parameter real TNOM = -`NOT_GIVEN; // Temperature [C]
215 |     parameter real L = 10E-6 from [0.0:inf]; // Channel length [m]
216 |     parameter real W = 10E-6 from [0.0:inf]; // Channel width [m]
217 |     parameter real M = 1.0 from [0.0:inf]; // Parallel multiple device number
218 |     parameter real NS = 1.0 from [0.0:inf]; // Series multiple device number
219 |     parameter real AS = 0.0 from [0.0:inf]; // Source area	//AB: 040902
220 |     parameter real AD = 0.0 from [0.0:inf]; // Drain area	//AB: 040902
221 |     parameter real PS = 0.0 from [0.0:inf]; // Source perimeter	//AB: 040902
222 |     parameter real PD = 0.0 from [0.0:inf]; // Drain perimeter	//AB: 040902
223 |     // *** Process related parameters
224 |     parameter real COX = 2.0E-3 from [0.0:inf]; // Gate oxide capacitance per unit area [F]
225 |     parameter real XJ = 300E-9 from [0.0:inf]; // Junction depth [m]
226 |     //*** Threshold voltage/substrate effect parameters (long-channel)
227 |     parameter real VTO = 0.5 from [-inf:inf]; // Long-channel threshold voltage [V]
228 |     parameter real TCV = 1.0e-3; // Threshold voltage temperature coefficient [V/K]
229 |     parameter real GAMMA = 0.7 from [0.0:inf]; // Body effect parameter
230 |     parameter real PHI = 0.5 from [0.2:inf]; // Bulk Fermi potential [V]
231 |     //*** Mobility parameters (long-channel) ***
232 |     parameter real KP = 150E-6 from [0.0:inf]; // Transconductance parameter [A/V/V]
233 |     parameter real BEX = -1.5; // Mobility temperature exponent
234 |     parameter real THETA = 0.0 from [0.0:inf]; // Mobility reduction coefficient [1/V]
235 |     parameter real E0 = 1.0E8; // Mobility reduction coefficient [V/m]
236 |     //*** Velocity sat./channel length mod. parameters (short-channel)
237 |     parameter real UCRIT = 2.0E6 from [0.0:inf]; // Longitudinal critical field [V/m]
238 |     parameter real UCEX = 0.8; // Longitudinal critical field temperature exponent
239 |     parameter real LAMBDA = 0.8 from [0.0:inf]; // Depletion length coefficient (channel length modulation)
240 |     //*** Process related parameters
241 |     parameter real DL = -0.01E-6; // Channel width correction [m]
242 |     parameter real DW = -0.01E-6; // Channel length correction [m]
243 |     //*** Threshold voltage/substrate effect parameter (narrow-channel)
244 |     parameter real WETA = 0.2 from [0.0:inf]; // Narrow-channel effect coefficient
245 |     //*** Threshold voltage/substrate effect parameters (short-channel)
246 |     parameter real LETA = 0.3 from [0.0:inf]; // Short-channel effect coefficient
247 |     parameter real Q0 = 230E-6 from [0.0:inf]; // Reverse short channel effect peak charge density
248 |     parameter real LK = 0.4E-6 from [0.0:inf]; // Reverse short channel effect characteristic length [m]
249 |     //*** Substrate current parameters
250 |     parameter real IBA = 5.0E8 from [0.0:inf]; // First impact ionization coefficient [1/m]
251 |     parameter real IBB = 4.0E8 from [0.0:inf]; // Second impact ionization coefficient [V/m]
252 |     parameter real IBBT = 9.0e-4; // Temperature coefficient for IBB [1/K]
253 |     parameter real IBN = 1.0 from [0.0:inf]; // Saturation voltage factor for impact ionization
254 |     //*** Series resistance parameters
255 |     parameter real RSH = 0.0 from [0.0:inf]; // Sheet resistance [Ohms]
256 |     parameter real HDIF = 0.5E-6 from [0.0:inf]; // Sheet resistance multipler
257 |     //*** for MC analysis fk 25/05/97
258 |     parameter real AVTO = 1E-6 from [0.0:inf]; // Area related threshold voltage mismatch parameter [Vm]
259 |     parameter real AKP = 1E-6 from [0.0:inf]; // Area related gain mismatch parameter [m]
260 |     parameter real AGAMMA = 1E-6 from [0.0:inf]; // Area related body effect mismatch parameter [sqr(V) m]
261 |     parameter real AF = 1.0 from (0:inf); // Flicker noise exponent
262 |     parameter real KF = 0.0 from [0:inf); // Flicker noise coefficient
263 |     //*** JUNCTION DRAIN-BULK AND SOURCE-BULK AREA, CURRENT, CAPACITANCE [AB:040902]
264 |     parameter real xd_n          = 1.0           from [0.0:inf);
265 |     parameter real xd_js         = 1.0E-09       from [0.0:inf);
266 |     parameter real xd_jsw        = 1.0E-12       from [0.0:inf);
267 |     parameter real xd_jswg       = 1.0E-12       from [0.0:inf);
268 |     parameter real xd_mj         = 0.900         from [0.0:1.0];
269 |     parameter real xd_mjsw       = 0.700         from [0.0:1.0];
270 |     parameter real xd_mjswg      = 0.700         from [0.0:1.0];
271 |     parameter real xd_pb         = 0.800         from (0.0:inf);
272 |     parameter real xd_pbsw       = 0.600         from (0.0:inf);
273 |     parameter real xd_pbswg      = 0.600         from (0.0:inf);
274 |     parameter real xd_cj         = 1.0E-09       from [0.0:inf);
275 |     parameter real xd_cjsw       = 1.0E-12       from [0.0:inf);
276 |     parameter real xd_cjswg      = 1.0E-12       from [0.0:inf);
277 |     parameter real xd_gmin       = 0.0           from [0.0:inf);
278 |     parameter real xd_xjbv       = 0.0           from [0.0:inf);
279 |     parameter real xd_bv         = 10.0          from [0.0:inf);
280 |     parameter real xd_njts       = 1.0           from [0.0:inf);
281 |     parameter real xd_njtssw     = 1.0           from [0.0:inf);
282 |     parameter real xd_njtsswg    = 1.0           from [0.0:inf);
283 |     parameter real xd_vts        = 0.0           from [0.0:inf);
284 |     parameter real xd_vtssw      = 0.0           from [0.0:inf);
285 |     parameter real xd_vtsswg     = 0.0           from [0.0:inf);
286 |     parameter real tp_xti        = 3.0           from (-inf:inf);
287 |     parameter real tp_cj         = 0.0           from (-inf:inf);
288 |     parameter real tp_cjsw       = 0.0           from (-inf:inf);
289 |     parameter real tp_cjswg      = 0.0           from (-inf:inf);
290 |     parameter real tp_pb         = 0.0           from (-inf:inf);
291 |     parameter real tp_pbsw       = 0.0           from (-inf:inf);
292 |     parameter real tp_pbswg      = 0.0           from (-inf:inf);
293 |     parameter real tp_njts       = 0.0           from [0.0:inf);
294 |     parameter real tp_njtssw     = 0.0           from [0.0:inf);
295 |     parameter real tp_njtsswg    = 0.0           from [0.0:inf);
296 |     analog begin
297 |         // Set constant
298 |         EPSOX  = 3.9 * `P_EPS0;
299 |         epssil = 11.7 * `P_EPS0;
300 |         Ibd = 0.0;
301 |         // The following are necessary to prevent memory states being reserved:
302 |         THETA_VP_1 = 0.0;
303 |         VPprime = 0.0;
304 |         sqrt_VP_Vt = 0.0;
305 |         // Geometry, voltage and temperature independent model variables
306 |         eps_COX = epssil/COX;
307 |         Lc  = sqrt(eps_COX*XJ);
308 |         Lc_LAMBDA  = Lc * LAMBDA;
309 |         eps_COX_W = 3.0 * eps_COX * WETA;
310 |         eps_COX_L = eps_COX * LETA;
311 |         IBN_2 = IBN + IBN;
312 |         T0 = COX / (epssil*E0);
313 |         V0 = (Q0+Q0) / COX;
314 |         eta_qi = TYPE > 0 ? 0.5 : 0.3333333333333;
315 |         /* Model working variables, geometry and voltage independent,
316 |          * which need to be updated after temperature change
317 |          * EKV model internal variables depending on temperature.
318 |          */
319 |         /* If Temp is explicitly specified, use that value
320 |            otherwise use Tckt+Trise */
321 |         if (TEMP == -`NOT_GIVEN)	//AB: 040902 Temp -> TEMP
322 |             T = $temperature + Trise;
323 |         else
324 |             T = TEMP + `P_CELSIUS0;	//AB: 040902 Temp -> TEMP
325 |         if (TNOM == -`NOT_GIVEN)
326 |             Tnom = `DEFAULT_TNOM + `P_CELSIUS0;
327 |         else
328 |             Tnom = TNOM + `P_CELSIUS0;
329 |         Vt = $vt(T);
330 |         Vt_01 = 0.1 * Vt;
331 |         inv_Vt = 1.0 / Vt;
332 |         Vt_2 = Vt + Vt;
333 |         Vt_4 = Vt_2 + Vt_2;
334 |         Vt_Vt = Vt * Vt;
335 |         Vt_Vt_2 = Vt_Vt + Vt_Vt;
336 |         Vt_Vt_16 = 16.0 * Vt_Vt;
337 |  
338 |         Eg = 1.16 - 7.02e-4 * T * T / (T + 1108.0);
339 |         refEg = 1.16 - (7.02e-4*Tnom*Tnom) / (Tnom + 1108.0);
340 |         deltaT = T - Tnom;
341 |         ratioT = T / Tnom;
342 |         VTO_T = VTO - TCV * deltaT;
343 |         KP_T = KP * pow(ratioT, BEX);
344 |         UCRIT_T = UCRIT * pow(ratioT, UCEX);
345 |         IBB_T = IBB * (1.0 + IBBT * deltaT);
346 |         PHI_T = PHI * ratioT - 3.0 * Vt * ln(ratioT) - refEg * ratioT + Eg;
347 |         //  !!  mb  99/07/30  prevents PHI from becoming smaller than 0.2
348 |         tmp1 = 0.2;
349 |         tmp2 = PHI_T - tmp1;
350 |         PHI_T = 0.5*(tmp2 + sqrt(tmp2*tmp2 + Vt*Vt)) + tmp1;
351 |         sqrt_PHI = sqrt(PHI_T);
352 |         inv_UCRIT = 1.0/UCRIT_T;
353 |         Lc_UCRIT  = Lc * UCRIT_T;
354 |         Lc_IBB  = Lc * IBB_T;
355 |         IBA_IBB = IBA / IBB_T;
356 |         /* VTO, KP and GAMMA with variation for MC analysis if required.
357 |          * The default value for model parameters AVTO, AKP and AGAMMA
358 |          * is set to 1e-6 to allow meaningful sensitivity analysis. Only
359 |          * the deviation from this value has to be taken into account
360 |          */
361 |         // wg: for userc.c and verilog implementations
362 |         Leff = L + DL;
363 |         // wg: for userc.c and verilog implementations
364 |         Weff = W + DW;
365 |         Vc = UCRIT_T*Leff;   //  NOTE: use L if necessary
366 |         log_Vc_Vt = Vt*(ln(0.5*Vc*inv_Vt)-0.6);   //    mb  98/02/05  (r1)
367 |         // de-normalization
368 |         AWL = 1.0/sqrt(Weff*Leff);
369 |         if (TYPE > 0)
370 |             VTO_S  = ((AVTO != 1e-6) ? AWL*(AVTO - 1e-6) + VTO_T : VTO_T);
371 |         else
372 |             VTO_S  = ((AVTO != 1e-6) ? AWL*(1e-6 - AVTO) - VTO_T: -VTO_T);
373 |         KP_Weff = Weff * ((AKP != 1e-6) ? KP_T*(1 + (AKP - 1e-6)*AWL) : KP_T);
374 |         GAMMA_S = ((AGAMMA !=1e-6) ? GAMMA + (AGAMMA - 1e-6)*AWL : GAMMA);
375 |         GAMMA_sqrt_PHI = GAMMA_S*sqrt_PHI;
376 |         /* ************************************
377 |          *     STATIC MODEL EQUATIONS
378 |          * *************************************/
379 |         //  VGprime:
380 |         if (V0 == 0.0)
381 |             deltaVFB = 0.0;
382 | //      else begin  : VGprime		//AB: 040902 VGPrime is also a variable and 
383 |         else begin  : VGprime_block	//AB: 040902 VGPrime ->  VGprime_block
384 |             real sqv;
385 |             // mb  99/03/26  corrected for multiple device number
386 |             vL = 0.28 * (Leff/(LK*NS) - 0.1);
387 |             sqv = 1.0 / (1.0 + 0.5*(vL + sqrt(vL*vL + 1.936e-3)));
388 |             deltaVFB = V0 * sqv * sqv;
389 |          end
390 |         VG = TYPE * V(g,b); // wg 22/04/08 corrected for device TYPE
391 |         VS = TYPE * V(s,b);
392 |         VD = TYPE * V(d,b);
393 |         if (VD - VS < 0) begin
394 |             Mode = `REV;
395 |             T1 = VS;
396 |             VS = VD;
397 |             VD = T1;
398 |         end
399 |         else
400 |             Mode = `FWD;
401 |         // VGB   = VGS - VBS;
402 |         // VBD   = VBS - VDS;
403 |         VGstar = VG - VTO_S - deltaVFB + PHI_T + GAMMA_sqrt_PHI;
404 |         sqrt_VGstar = sqrt(VGstar*VGstar + 2.0*Vt_Vt_16);
405 |         VGprime = 0.5*(VGstar + sqrt_VGstar);
406 |         //  Pinch-off voltage VP, limited to VP >= -PHI
407 |         PHI_VS = PHI_T+VS;
408 |         sqrt_PHI_VS_Vt = sqrt(PHI_VS*PHI_VS+Vt_Vt_16);
409 |         sqrt_PHI_VS = sqrt(0.5*(PHI_VS+sqrt_PHI_VS_Vt));
410 |         PHI_VD = PHI_T+VD;
411 |         sqrt_PHI_VD_Vt = sqrt(PHI_VD*PHI_VD+Vt_Vt_16);
412 |         sqrt_PHI_VD = sqrt(0.5*(PHI_VD+sqrt_PHI_VD_Vt));
413 |         WETA_W  = eps_COX_W * M / Weff;
414 |         LETA_L  = eps_COX_L * NS / Leff;
415 |         // mb: symmetric version of GAMMAprime necessary with charges model
416 |         big_sqrt_VP0 = sqrt(VGprime + 0.25*GAMMA_S*GAMMA_S);
417 |         VP0 = VGprime - PHI_T - GAMMA_S*(big_sqrt_VP0 - 0.5*GAMMA_S);
418 |         sqrt_PHI_VP0 = sqrt(VP0+PHI_T+Vt_01);
419 |         GAMMAstar = GAMMA_S - LETA_L * (sqrt_PHI_VS+sqrt_PHI_VD) +
420 |             WETA_W * sqrt_PHI_VP0;
421 |         // keep GAMMAprime from becoming negative
422 |         sqrt_GAMMAstar = sqrt(GAMMAstar*GAMMAstar+Vt_01);
423 |         GAMMAprime = 0.5*(GAMMAstar+sqrt_GAMMAstar);
424 |         big_sqrt_VP = sqrt(VGprime+0.25*GAMMAprime*GAMMAprime);
425 |         VP = VGprime-PHI_T-GAMMAprime*(big_sqrt_VP-0.5*GAMMAprime);
426 |         // Forward normalized current:
427 |         tmp1  = (VP - VS) * inv_Vt;
428 |         if (tmp1 > -0.35) begin
429 |             z0  = 2.0/(1.3 + tmp1 - ln(tmp1 + 1.6));
430 |             zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
431 |             yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
432 |         end else begin
433 |             if (tmp1 > -15.0) begin
434 |                 z0  = 1.55 + exp(-tmp1);
435 |                 zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
436 |                 yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
437 |             end else begin
438 |                 if (tmp1 > -23.0) begin
439 |                     yk  = 1.0/(2.0 + exp(-tmp1));
440 |                 end else begin
441 |                     yk  = exp(tmp1) + 1E-64;
442 |                 end
443 |             end
444 |         end
445 |         if_     = yk*(1.0 + yk);
446 |         sqrt_if = sqrt(if_);
447 |         dif_dv  = yk;
448 |         //  Saturation voltage:
449 |         Vt_Vc = Vt / Vc;
450 |         VDSS_sqrt = sqrt(0.25+sqrt_if*Vt_Vc);
451 |         VDSS = Vc*(VDSS_sqrt-0.5);
452 |         Vds = 0.5*(VD-VS);
453 |         deltaV_2 = Vt_Vt_16*(LAMBDA*(sqrt_if-
454 |             VDSS*inv_Vt)+15.625e-3);
455 |         sqrt_VDSS_deltaV = sqrt(VDSS*VDSS+deltaV_2);
456 |         sqrt_Vds_VDSS_deltaV = sqrt((Vds-VDSS)*(Vds-VDSS)+deltaV_2);
457 |         Vip = sqrt_VDSS_deltaV-sqrt_Vds_VDSS_deltaV;
458 |         VDSSprime_sqrt = sqrt(0.25+(sqrt_if-0.75*ln(if_))*Vt_Vc);
459 |         VDSSprime = Vc*(VDSSprime_sqrt-0.5)+log_Vc_Vt;
460 |         //  Reverse normalized current:
461 |         Vdsprime = Vds-VDSSprime;   //    mb  97/07/18  introduced Vdsprime
462 |         sqrt_VDSSprime_deltaV = sqrt(VDSSprime*VDSSprime+deltaV_2);
463 |         sqrt_Vds_VDSSprime_deltaV = sqrt(Vdsprime*Vdsprime+deltaV_2);
464 |         tmp1 = (VP-Vds-VS-sqrt_VDSSprime_deltaV+
465 |             sqrt_Vds_VDSSprime_deltaV)*inv_Vt;
466 |         // include -> Charge F(x) interpolate function
467 |         if (tmp1 > -0.35) begin
468 |             z0  = 2.0/(1.3 + tmp1 - ln(tmp1 + 1.6));
469 |             zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
470 |             yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
471 |         end else begin
472 |             if (tmp1 > -15.0) begin
473 |                 z0  = 1.55 + exp(-tmp1);
474 |                 zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
475 |                 yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
476 |             end else begin
477 |                 if (tmp1 > -23.0) begin
478 |                     yk  = 1.0/(2.0 + exp(-tmp1));
479 |                 end else begin
480 |                     yk  = exp(tmp1) + 1E-64;
481 |                 end
482 |             end
483 |         end
484 |         irprime       = yk*(1.0 + yk);
485 |         sqrt_irprime  = sqrt(irprime);
486 |         dirprime_dv   = yk;
487 |         /* Channel length modulation & mobility reduction due
488 |          * to longitudinal field */
489 |         deltaL = Lc_LAMBDA*ln(1.0+(Vds-Vip)/Lc_UCRIT);
490 |         Lprime = Leff-deltaL+(Vds+Vip)*inv_UCRIT;
491 |         Lmin = 0.1*Leff;
492 |         sqrt_Lprime_Lmin = sqrt(Lprime*Lprime+Lmin*Lmin);
493 |         Leq = 0.5*(Lprime+sqrt_Lprime_Lmin);
494 |         // Transconductance factor:
495 |         // Mobility reduction due to vertical field
496 |         // Reverse normalized current:
497 |         // ratioV_ir
498 |         tmp1 = (VP - VD) * inv_Vt;
499 |         if (tmp1 > -0.35) begin
500 |             z0  = 2.0/(1.3 + tmp1 - ln(tmp1 + 1.6));
501 |             zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
502 |             yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
503 |         end else begin
504 |             if (tmp1 > -15.0) begin
505 |                 z0  = 1.55 + exp(-tmp1);
506 |                 zk  = (2.0 + z0)/(1.0 + tmp1 + ln(z0));
507 |                 yk  = (1.0 + tmp1 + ln(zk))/(2.0 + zk);
508 |             end else begin
509 |                 if (tmp1 > -23.0) begin
510 |                     yk  = 1.0/(2.0 + exp(-tmp1));
511 |                 end else begin
512 |                     yk  = exp(tmp1) + 1E-64;
513 |                 end
514 |             end
515 |         end
516 |         ir      = yk*(1.0 + yk);
517 |         sqrt_ir = sqrt(ir);
518 |         dir_dv  = yk;
519 |         sif2 = 0.25+if_;
520 |         sir2 = 0.25+ir;
521 |         sif = sqrt(sif2);
522 |         sir = sqrt(sir2);
523 |         sif_sir_2 = (sif+sir)*(sif+sir);
524 |         VP_PHI_eps = VP+PHI_T+1.0e-6;
525 |         sqrt_PHI_VP_2 = 2.0*sqrt(VP_PHI_eps);
526 |         n_1 = GAMMA_S/sqrt_PHI_VP_2;
527 |         n_1_n = GAMMA_S/(sqrt_PHI_VP_2 + GAMMA_S);
528 |         //  Normalized inversion charge  (qi=QI/WLCox)
529 |         qi = -(1.0+n_1)*Vt*((0.66666666+0.66666666)*
530 |             (sir2+sir*sif+sif2)/(sif+sir) - 1.0);
531 |         // Normalized depletion charge (qb=QB/WLCox), for depletion to inversion
532 |         qb = -0.5*GAMMA_S*sqrt_PHI_VP_2 - n_1_n*qi;
533 |         if (E0 == 0.0) begin
534 |             /*  NOTE: this version of the simple mobility model from prior
535 |              *  versions of the EKV model is reinstated.
536 |              *  In case E0 is *not* specified, this
537 |              *  simple mobility model is used according to THETA, if specified.
538 |              *  VPprime:
539 |              *  mb  eliminated discontinuity of derivative of 1+THETA*VP
540 |              */
541 |              sqrt_VP_Vt = sqrt(VP*VP + Vt_Vt_2);
542 |              VPprime = 0.5 * (VP + sqrt_VP_Vt);
543 |              THETA_VP_1 = 1.0+THETA*VPprime;
544 |              beta = KP_Weff  / (Leq * THETA_VP_1); // mb  97/07/18
545 |          end
546 |         else begin
547 |              /*  new model for mobility reduction, linked to the charges model
548 |               *  mb  98/10/11  (r10)  introduced fabs(Eeff) (jpm)
549 |               *  E0_Q_1 = 1.0 + T0 * abs(qb+eta_qi*qi);
550 |               */
551 |               if ((qb + eta_qi*qi) > 0.0)
552 |                   E0_Q_1 = 1.0 + T0*(qb + eta_qi*qi);
553 |               else
554 |                   E0_Q_1 = 1.0 - T0*(qb + eta_qi*qi);
555 |               T0_GAMMA_1 = 1.0 + T0*GAMMA_sqrt_PHI;
556 |               beta = KP_Weff * T0_GAMMA_1 / (Leq * E0_Q_1);
557 |         end
558 |         /* Slope factor: mb introduced new formula to avoid divergence
559 |          * of n for VP->-PHI  */
560 |         sqrt_PHI_VP = sqrt(PHI_T+VP+Vt_4);   //    mb  95/12/19  introduced Vt_4
561 |         n = 1.0 + GAMMA_S/(2.0*sqrt_PHI_VP);
562 |         //  Drain current:
563 |         if_ir = if_-irprime;
564 |         Ispec = Vt_Vt_2 * n * beta;
565 |         Id = Ispec * if_ir;
566 |         /* Return threshold voltage
567 |          * Von = Vth(Vs) = Vto + Gamma*(sqrt(Phi + Vsb)-sqrt(Phi)) */
568 |         Von = VTO_S + GAMMAprime*(sqrt_PHI_VS - sqrt_PHI);
569 |         // Return saturation voltage (estimate)
570 |         Vdsat = Vt * (2.0*sqrt_if + 4.0);
571 |         // Return equivalent conductance for thermal noise calculation
572 |         Gn  = beta * abs(qi);
573 |         /*  Pinch-off voltage derivatives:
574 |          *  mb  97/09/14  symmetric version of GAMMAprime necessary with
575 |          *  charges model
576 |          *  mb  99/05/10  (r12) New VGprime formulation (REVISION III) allows
577 |          *  VP derivatives to be expressed with a single equation
578 |          */
579 |         tmp1 = GAMMAprime / (sqrt_GAMMAstar+sqrt_GAMMAstar);
580 |         tmp2 = VGprime/sqrt_VGstar;                        //  dVGprime_dVG
581 |         dGAMMAprime_dVD = -LETA_L * tmp1 * sqrt_PHI_VD / sqrt_PHI_VD_Vt;
582 |         dGAMMAprime_dVS = -LETA_L * tmp1 * sqrt_PHI_VS / sqrt_PHI_VS_Vt;
583 |         dGAMMAprime_dVG =  WETA_W * tmp1 * (big_sqrt_VP0-0.5*GAMMA_S) /
584 |             (big_sqrt_VP0*sqrt_PHI_VP0) * tmp2;
585 |         tmp3 = (VP+PHI_T) / big_sqrt_VP;
586 |         dVP_dVD = -tmp3 * dGAMMAprime_dVD;
587 |         dVP_dVS = -tmp3 * dGAMMAprime_dVS;
588 |         dVP_dVG = -tmp3 * dGAMMAprime_dVG + (1.0 -
589 |             GAMMAprime/(big_sqrt_VP+big_sqrt_VP)) * tmp2;
590 |         //  Forward normalized current derivatives:
591 |         tmp1 = dif_dv * inv_Vt;   //    mb  95/08/28, 97/04/21
592 |         dif_dVD = tmp1 * dVP_dVD;
593 |         dif_dVS = tmp1 * (dVP_dVS-1.0);
594 |         dif_dVG = tmp1 * dVP_dVG;
595 |         //  Saturation voltage derivatives:
596 |         tmp1 = Vt / (4.0*VDSS_sqrt*sqrt_if);
597 |         dVDSS_dVD = tmp1 * dif_dVD;
598 |         dVDSS_dVS = tmp1 * dif_dVS;
599 |         dVDSS_dVG = tmp1 * dif_dVG;
600 |         //  deltaV derivatives:
601 |         tmp1 = (Vt_4+Vt_4) * LAMBDA;
602 |         tmp2 = Vt / (sqrt_if+sqrt_if);
603 |         ddeltaV_dVD = tmp1 * (dif_dVD*tmp2 - dVDSS_dVD);
604 |         ddeltaV_dVS = tmp1 * (dif_dVS*tmp2 - dVDSS_dVS);
605 |         ddeltaV_dVG = tmp1 * (dif_dVG*tmp2 - dVDSS_dVG);
606 |         //  Vip derivatives:
607 |         tmp1 = 1.0 / sqrt_VDSS_deltaV;
608 |         tmp2 = 1.0 / sqrt_Vds_VDSS_deltaV;
609 |         tmp3 = Vds-VDSS;
610 |         dVip_dVD = (VDSS*dVDSS_dVD + ddeltaV_dVD) * tmp1 -
611 |             (tmp3 * (0.5-dVDSS_dVD) + ddeltaV_dVD) * tmp2;
612 |         dVip_dVS = (VDSS*dVDSS_dVS + ddeltaV_dVS) * tmp1 -
613 |             (tmp3 * (-0.5-dVDSS_dVS) + ddeltaV_dVS) * tmp2;
614 |         dVip_dVG = (VDSS*dVDSS_dVG + ddeltaV_dVG) * tmp1 -
615 |             (tmp3 * -dVDSS_dVG + ddeltaV_dVG) * tmp2;
616 |         //  VDSSprime derivatives:
617 |         tmp1 = Vt * (sqrt_if-1.5)/(4.0*VDSSprime_sqrt*if_);
618 |         dVDSSprime_dVD = tmp1 * dif_dVD;
619 |         dVDSSprime_dVS = tmp1 * dif_dVS;
620 |         dVDSSprime_dVG = tmp1 * dif_dVG;
621 |         //  Reverse normalized current derivatives:
622 |         tmp1 = dirprime_dv * inv_Vt;   //    mb  95/08/28,  97/04/21
623 |         tmp2 = 1.0 / sqrt_VDSSprime_deltaV;        //    mb  97/04/21
624 |         tmp3 = 1.0 / sqrt_Vds_VDSSprime_deltaV;
625 |         dirprime_dVD = tmp1 * (dVP_dVD-0.5 -
626 |             (VDSSprime*dVDSSprime_dVD+ddeltaV_dVD) * tmp2 +
627 |             (Vdsprime*(0.5-dVDSSprime_dVD)+ddeltaV_dVD) * tmp3);
628 |         dirprime_dVS = tmp1 * (dVP_dVS-0.5 -
629 |             (VDSSprime*dVDSSprime_dVS+ddeltaV_dVS) * tmp2 +
630 |             (Vdsprime*(-0.5-dVDSSprime_dVS)+ddeltaV_dVS) * tmp3);
631 |         dirprime_dVG = tmp1*(dVP_dVG -
632 |             (VDSSprime*dVDSSprime_dVG+ddeltaV_dVG) * tmp2 +
633 |             (Vdsprime*(-dVDSSprime_dVG)+ddeltaV_dVG) * tmp3);
634 |         //  Channel length modulation & mobility reduction derivatives:
635 |         //  deltaL derivatives:
636 |         tmp1 = Lc_LAMBDA / (Lc_UCRIT+Vds-Vip);
637 |         ddeltaL_dVD = tmp1 * (0.5-dVip_dVD);
638 |         ddeltaL_dVS = tmp1 * (-0.5-dVip_dVS);
639 |         ddeltaL_dVG = -tmp1 * dVip_dVG;
640 |         //  Leq derivatives:
641 |         tmp1 = 1.0 / sqrt_Lprime_Lmin; //  in fact dLeq_dVX/Leq
642 |         dLeq_dVD = tmp1 * (-ddeltaL_dVD + (0.5+dVip_dVD)*inv_UCRIT);
643 |         dLeq_dVS = tmp1 * (-ddeltaL_dVS + (-0.5+dVip_dVS)*inv_UCRIT);
644 |         dLeq_dVG = tmp1 * (-ddeltaL_dVG + dVip_dVG*inv_UCRIT);
645 |         //  Transconductance factor derivatives:
646 |         tmp1 = dir_dv*inv_Vt;
647 |         dir_dVD = tmp1 * (dVP_dVD-1.0);
648 |         dir_dVS = tmp1 * dVP_dVS;
649 |         dir_dVG = tmp1 * dVP_dVG;
650 |         tmp1 = -(1.0+n_1)*Vt*0.66666666/sif_sir_2;
651 |         tmp2 = tmp1*(sif+2.0*sir);
652 |         tmp3 = tmp1*(sir+2.0*sif);
653 |         tmp1 = -n_1*qi/((2.0+n_1+n_1)*VP_PHI_eps);
654 |         dQI_dVD = tmp1 * dVP_dVD + tmp2 * dif_dVD + tmp3 * dir_dVD;
655 |         dQI_dVS = tmp1 * dVP_dVS + tmp2 * dif_dVS + tmp3 * dir_dVS;
656 |         dQI_dVG = tmp1 * dVP_dVG + tmp2 * dif_dVG + tmp3 * dir_dVG;
657 |         tmp1 = (1.0+n_1)-qi/(2.0*(1.0+n_1)*VP_PHI_eps);
658 |         dQB_dVD = -n_1_n * (tmp1 * dVP_dVD + dQI_dVD);
659 |         dQB_dVS = -n_1_n * (tmp1 * dVP_dVS + dQI_dVS);
660 |         dQB_dVG = -n_1_n * (tmp1 * dVP_dVG + dQI_dVG);
661 |         if (E0 == 0.0) begin
662 |             tmp1 = THETA * VPprime / (THETA_VP_1 * sqrt_VP_Vt);
663 |             //  VPprime derivatives:
664 |             dVPprime_dVD = tmp1 * dVP_dVD;
665 |             dVPprime_dVS = tmp1 * dVP_dVS;
666 |             dVPprime_dVG = tmp1 * dVP_dVG;
667 |             dbeta_dVD = -dLeq_dVD - dVPprime_dVD;  //  in fact dbeta_dVX / beta
668 |             dbeta_dVS = -dLeq_dVS - dVPprime_dVS;
669 |             dbeta_dVG = -dLeq_dVG - dVPprime_dVG;
670 |         end
671 |         else begin
672 |             tmp1 = T0 / E0_Q_1;
673 |             dbeta_dVD = -dLeq_dVD + tmp1 * (dQB_dVD+eta_qi*dQI_dVD);
674 |             dbeta_dVS = -dLeq_dVS + tmp1 * (dQB_dVS+eta_qi*dQI_dVS);
675 |             dbeta_dVG = -dLeq_dVG + tmp1 * (dQB_dVG+eta_qi*dQI_dVG);
676 |         end
677 |         //  Slope factor derivatives:
678 |         tmp1 = -GAMMA_S/(4.0*n*sqrt_PHI_VP*(PHI_T+VP+Vt_4));//    mb  95/12/19
679 |         dn_dVD = tmp1 * dVP_dVD;
680 |         dn_dVS = tmp1 * dVP_dVS;
681 |         dn_dVG = tmp1 * dVP_dVG;
682 |         //  Transconductances:
683 |         gds =  Ispec*((dn_dVD + dbeta_dVD)*if_ir + dif_dVD - dirprime_dVD);
684 |         gms = -Ispec*((dn_dVS + dbeta_dVS)*if_ir + dif_dVS - dirprime_dVS);
685 |         gm =   Ispec*((dn_dVG + dbeta_dVG)*if_ir + dif_dVG - dirprime_dVG);
686 |         gmbs = gms - gm - gds;
687 |         // S/D resistance corrections including W and DW
688 |         RSeff = (RSH*HDIF)/(Weff-DW);
689 |         RDeff = (RSH*HDIF)/(Weff-DW);
690 |         tmp1 = 1.0/(1.0 + gms*RSeff + gds*RDeff);
691 |         Id = Id*tmp1;
692 |         /******   Impact ionization current     ******
693 |          * mb  95/12/19  introduced impact ionization
694 |          * This current component is flowing from the intrinsic drain terminal
695 |          * to the bulk (for NMOS) in parallel with the junction current.
696 |          * The simulator should also take into account the corresponding
697 |          * conductances.
698 |          */
699 |         //  Substrate current:
700 |         Vib = VD-VS-IBN_2*VDSS;
701 |         if ((Vib > 0.0) && (IBA_IBB > 0.0)) begin
702 |             inv_Vib = 1.0/Vib;
703 |             Lc_IBB_Vib = -Lc_IBB*inv_Vib;
704 |             if (Lc_IBB_Vib < -35.0) // math precision check
705 |                 Lc_IBB_Vib = -35.0;
706 |             exp_ib = exp(Lc_IBB_Vib);
707 |             isub = IBA_IBB*Vib*exp_ib;
708 |             Isub = isub*Id;
709 |             dIsub_factor = Isub*inv_Vib*(1.0-Lc_IBB_Vib);
710 |         end
711 |         else begin
712 |             Lc_IBB_Vib = 0.0;
713 |             Isub = 0.0;
714 |         end
715 |         // END: substrate current computation
716 |         Ibd = Ibd - Isub;
717 |         // --- Charge calculations ---
718 |         WLCox = Weff * Leff * COX;
719 |         sif3 = sif*sif2;
720 |         sir3 = sir*sir2;
721 |         tmp1 = sqrt(PHI_T + 0.5 * VP);
722 |         sqrt_PHI_VP2_2 = tmp1+tmp1;
723 |         n_Vt_COX = (1.0 + GAMMAprime/sqrt_PHI_VP2_2) * Vt*WLCox;
724 |         QD = -n_Vt_COX*(0.266666666*(3.0*sir3+6.0*sir2*sif+4.0*
725 |             sir*sif2+2.0*sif3)/sif_sir_2 - 0.5);
726 |         QS = -n_Vt_COX*(0.266666666*(3.0*sif3+6.0*sif2*sir+4.0*
727 |             sif*sir2+2.0*sir3)/sif_sir_2 - 0.5);
728 |         QI = QS + QD;
729 |         QB = WLCox * (-0.5*GAMMAprime*sqrt_PHI_VP_2 + VGprime - VGstar) -
730 |             QI*GAMMAprime/(GAMMAprime+sqrt_PHI_VP2_2);
731 |         QG = -QI -QB;
732 |         I(ds) <+ TYPE * Mode * Id;          // wg 22/04/08 corrected for device TYPE
733 |         ddt_QD = ddt(QD);
734 |         ddt_QS = ddt(QS);
735 |         if (Mode == `FWD) begin
736 |             I(db) <+ TYPE * ddt_QD;         // wg 22/04/08 corrected for device TYPE
737 |             I(sb) <+ TYPE * ddt_QS;
738 |             I(db) <+ TYPE * Isub;
739 |         end
740 |         else begin
741 |             I(sb) <+ TYPE * ddt_QD;         // wg 22/04/08 corrected for device TYPE
742 |             I(db) <+ TYPE * ddt_QS;
743 |             I(sb) <+ TYPE * Isub;
744 |         end
745 |         I(gb) <+ TYPE * ddt(QG);            // wg 22/04/08 corrected for device TYPE
746 | //      if (Noise) begin : Noise		    //AB: 040902 Noise is also a variable and 
747 |         if (Noise) begin : Noise_block		//AB: 040902 Noise ->  Noise_block
748 |             real S_flicker, S_thermal;
749 |             S_thermal = 4 * `P_K * T * Gn;
750 |             S_flicker = KF * gm * gm / (Weff * NS * Leff * COX);
751 |             I(ds) <+ white_noise(S_thermal, "thermal") +
752 |                 flicker_noise(S_flicker, AF, "flicker");
753 |         end
754 |         ///////////////////////////////////
755 |         //EXTRINSIC PART: JUNCTION DIODES//
756 |         ///////////////////////////////////
757 | 	//diode area and perimeter computation
758 |         if ((AS == 0.0) && (HDIF>0.0)) as_i = 2.0*HDIF*Weff;
759 |         else as_i = AS;
760 |         if ((PS == 0.0) && (HDIF>0.0)) ps_i = 4.0*HDIF+1.0*Weff;
761 |         else ps_i = PS;
762 |         if ((AD == 0.0) && (HDIF>0.0)) ad_i = 2.0*HDIF*Weff;
763 |         else ad_i = AD;
764 |         if ((PD == 0.0) && (HDIF>0.0)) pd_i = 4.0*HDIF+1.0*Weff;
765 |         else pd_i = PD;
766 | 	//temperature update for diodes
767 |         temp_arg = exp((refEg/$vt(Tnom) - Eg/Vt + tp_xti*ln(ratioT))/xd_n);
768 |         js_t = xd_js*temp_arg;
769 |         jsw_t = xd_jsw*temp_arg;
770 |         jswg_t = xd_jswg*temp_arg;
771 |         pb_t = xd_pb - tp_pb*deltaT;
772 |         pbsw_t = xd_pbsw - tp_pbsw*deltaT;
773 |         pbswg_t = xd_pbswg - tp_pbswg*deltaT;
774 |         cj_t = xd_cj*(1.0+tp_cj*deltaT);
775 |         cjsw_t = xd_cjsw*(1.0+tp_cjsw*deltaT);
776 |         cjswg_t = xd_cjswg*(1.0+tp_cjswg*deltaT);
777 |         njts_t = xd_njts*(1.0+(ratioT-1.0)*tp_njts);
778 |         njtssw_t = xd_njtssw*(1.0+(ratioT-1.0)*tp_njtssw);
779 |         njtsswg_t = xd_njtsswg*(1.0+(ratioT-1.0)*tp_njtsswg);
780 |         //DC
781 |                 v_di_b = TYPE*V(d,b);
782 |                 v_si_b = TYPE*V(s,b);
783 |         //DRAIN - BULK
784 |                 is_d = js_t*ad_i+jsw_t*pd_i+jswg_t*Weff;
785 |                 arg_d = -v_di_b*ratioT/(Vt*xd_n);
786 |                 if (arg_d < -40.0) arg_d = -40.0;
787 | 		tmp0 = (-v_di_b+xd_bv)*ratioT/(Vt*xd_n);
788 | 		if (tmp0>70) f_breakdown_d = 1.0;
789 | 		else f_breakdown_d = 1.0 + xd_xjbv*exp(-tmp0);
790 | 	// TRAP-ASSISTED TUNNELING CURRENT
791 |                 idb_tun = -Weff*jswg_t*(exp(v_di_b*ratioT/(Vt*njtsswg_t) * xd_vtsswg/max(xd_vtsswg+v_di_b,1.0e-3))-1.0);
792 |                 idb_tun = idb_tun - pd_i*jsw_t*(exp(v_di_b*ratioT/(Vt*njtssw_t) * xd_vtssw/max(xd_vtssw+v_di_b,1.0e-3))-1.0);
793 |                 idb_tun = idb_tun - ad_i*js_t*(exp(v_di_b*ratioT/(Vt*njts_t) * xd_vts/max(xd_vts+v_di_b,1.0e-3))-1.0);
794 |                 I(d,b) <+ (is_d * (1.0 - exp(arg_d))*f_breakdown_d+v_di_b*xd_gmin + idb_tun)*TYPE*M;
795 |          //SOURCE - BULK
796 |                 is_s = js_t*as_i+jsw_t*ps_i+jswg_t*Weff;
797 |                 arg_s = -v_si_b*ratioT/(Vt*xd_n);
798 |                 if (arg_s < -40.0) arg_s = -40.0;
799 | 		tmp0 = (-v_si_b+xd_bv)*ratioT/(Vt*xd_n);
800 | 		if (tmp0>70) f_breakdown_s = 1.0;
801 | 		else f_breakdown_s = 1.0 + xd_xjbv*exp(-tmp0);
802 | 	// TRAP-ASSISTED TUNNELING CURRENT
803 |                 isb_tun = -Weff*jswg_t*(exp(v_si_b*ratioT/(Vt*njtsswg_t) * xd_vtsswg/max(xd_vtsswg+v_si_b,1.0e-3))-1.0);
804 |                 isb_tun = isb_tun - ps_i*jsw_t*(exp(v_si_b*ratioT/(Vt*njtssw_t) * xd_vtssw/max(xd_vtssw+v_si_b,1.0e-3))-1.0);
805 |                 isb_tun = isb_tun - as_i*js_t*(exp(v_si_b*ratioT/(Vt*njts_t) * xd_vts/max(xd_vts+v_si_b,1.0e-3))-1.0);
806 |                 I(s,b) <+ (is_s * (1.0 - exp(arg_s))*f_breakdown_s+v_si_b*xd_gmin + isb_tun)*TYPE*M;
807 | 	//AC
808 | 	
809 | 	//DRAIN - BULK
810 |                 if (v_di_b>0.0)
811 |                 begin
812 |                         csb_d  = cj_t   * ad_i * exp(-xd_mj*ln(1.0+v_di_b/pb_t));
813 |                         cssw_d = cjsw_t * pd_i * exp(-xd_mjsw*ln(1.0+v_di_b/pbsw_t));
814 |                         csswg_d = cjswg_t * Weff * exp(-xd_mjswg*ln(1.0+v_di_b/pbswg_t));
815 |                 end
816 |                 else
817 |                 begin
818 |                         csb_d  = cj_t   * ad_i * (1.0 - xd_mj*v_di_b/pb_t);
819 |                         cssw_d = cjsw_t * pd_i * (1.0 - xd_mjsw*v_di_b/pbsw_t);
820 |                         csswg_d = cjswg_t * Weff * (1.0 - xd_mjswg*v_di_b/pbswg_t);
821 |                 end
822 |                 qjd = (csb_d+cssw_d+csswg_d) * v_di_b;
823 |                 I(d,b) <+ ddt(qjd)*TYPE*M;
824 |          //SOURCE - BULK
825 |                 if (v_si_b>0.0)
826 |                 begin
827 |                         csb_s  = cj_t   * as_i * exp(-xd_mj*ln(1.0+v_si_b/pb_t));
828 |                         cssw_s = cjsw_t * ps_i * exp(-xd_mjsw*ln(1.0+v_si_b/pbsw_t));
829 |                         csswg_s = cjswg_t * Weff * exp(-xd_mjswg*ln(1.0+v_si_b/pbswg_t));
830 |                 end
831 |                 else
832 |                 begin
833 |                         csb_s  = cj_t   * as_i * (1.0 - xd_mj*v_si_b/pb_t);
834 |                         cssw_s = cjsw_t * ps_i * (1.0 - xd_mjsw*v_si_b/pbsw_t);
835 |                         csswg_s = cjswg_t * Weff * (1.0 - xd_mjswg*v_si_b/pbswg_t);
836 |                 end
837 |                 qjs = (csb_s+cssw_s+csswg_s) * v_si_b;
838 |                 I(s,b) <+ ddt(qjs)*TYPE*M;
839 | 	//END OF DIODES
840 |     end
841 | endmodule
842 | 


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